| Produktbeskrivelse
|
Samsung 850 PRO MZ-7KE2T0BW - SSD - 2 TB - SATA 6Gb/s
|
| Type
|
Solid state-drev - intern
|
| Kapacitet
|
2 TB
|
| Hardware kryptering
|
Ja
|
| Krypterings algoritme
|
256-bit AES
|
| NAND Flashhukommelses-type
|
Fler-niveaus celle (MLC)
|
| Model
|
2.5"
|
| Grænseflade
|
SATA 6Gb/s
|
| Dataoverførselshastighed
|
600 MBps
|
| Buffer størrelse
|
2 GB
|
| Egenskaber
|
Hardware Full Disk Encryption (FDE), TRIM support, Affaldsindsamlingsteknologi, DevSleep-tilstand, 3D V-NAND Technology, RAPID-tilstandssupport, Samsung MHX Controller, Low Power DDR3 SDRAM Cache, S.M.A.R.T., 256-bit AES, IEEE 1667
|
| Dimensioner (B x D x H)
|
69.85 mm x 100 mm x 6.8 mm
|
| Vægt
|
66 g
|
| Producentgaranti
|
10-års garanti
|
Produktdatablad |
|
| Enhedstype |
Solid state-drev - intern |
| Kapacitet |
2 TB |
| Hardware kryptering |
Ja |
| Krypterings algoritme |
256-bit AES |
| NAND Flashhukommelses-type |
Fler-niveaus celle (MLC) |
| Model |
2.5" |
| Grænseflade |
SATA 6Gb/s |
| Buffer størrelse |
2 GB |
| Egenskaber |
Hardware Full Disk Encryption (FDE), TRIM support, Affaldsindsamlingsteknologi, DevSleep-tilstand, 3D V-NAND Technology, RAPID-tilstandssupport, Samsung MHX Controller, Low Power DDR3 SDRAM Cache, S.M.A.R.T., 256-bit AES, IEEE 1667 |
| Bredde |
69.85 mm |
| Dybde |
100 mm |
| Højde |
6.8 mm |
| Vægt |
66 g |
| SSD-udholdenhed |
300 TB |
| Overføringshastighed, drev |
600 MBps (ekstern) |
| Intern datahastighed |
550 MBps (læs) / 520 MBps (skriv) |
| Maximum 4KB Random Write |
90000 IOPS |
| Maksimal 4 KB tilfældig læsning |
100000 IOPS |
| MTBF (forventet tid mellem fejl) |
2,000,000 timer |
| Interface |
1 x SATA 6 Gb/s - 7 pin Serial ATA |
| Kompatibel bås |
2.5" |
| Strømforbrug |
3.3 Watt (læs) ¦ 3.4 Watt (skriv) ¦ 60 mW (ledig) ¦ 5 mW (sov) |
| Med software |
Samsung Magician Software, Samsung Data Migration |
| Service & Support |
Begrænset garanti - 10 år |
| Min. driftstemperatur |
0 °C |
| Maks. driftstemperatur |
70 °C |
| Fugtighedsgrad ved brug |
5 - 95 % (ikke-kondenserende) |
| Modstandsdygtighed over for stød (non-operativ) |
1500 g @ 0,5 ms |
| Vibration tolerance (non-operativ) |
20 g @ 20-2000 Hz |
Samsung's flash memory is fabricated using an excellent 3D V-NAND architecture, which stacks 32 cell layers on top of one another rather than trying to decrease the cells' length and width to fit today's shrinking form factors. The result is higher density and higher performance using a smaller footprint and a breakthrough in overcoming the density limits of conventional planar NAND architecture. The result - enhanced performance, lower power consumption with an up to 1 GB LPDDR2 DRAM cache memory and improved energy-efficiency with the 3-core MEX controller.
